{rfName}
St

Indexed in

License and use

Citations

72

Altmetrics

Grant support

Research supported by the Spanish MINECO through Grants MAT2017-88693-R, MAT2014-57915-R, FIS2016-80434-P (AEI/FEDER, EU), BES-2015-071316, the Ramon y Cajal programme RYC-2011-09345, the Fundacion Ramon Areces and the Maria de Maeztu Programme for Units of Excellence in R&D (MDM-2014-0377), as well as from the Comunidad Autonoma de Madrid (CAM) MAD2D-CM Program (S2013/MIT-3007) and the European Union Seventh Framework Programme under grant agreement No. 604391 Graphene Flagship. JJP acknowledges Fulbright Fellowship for Sabbatical leave at University of Texas at Austin, EEUU. We acknowledge the computer resources and assistance provided by the Centro de Computacion Cientifica of the Universidad Autonoma de Madrid.

Analysis of institutional authors

Maeso, DavidAuthorSantos, HernanAuthorAgrait, NicolasAuthorPalacios, Juan JoseAuthorPrada, ElsaAuthorRubio-Bollinger, GabinoCorresponding Author

Share

April 16, 2019
Publications
>
Article
Green

Strong modulation of optical properties in rippled 2D GaSe via strain engineering

Publicated to:NANOTECHNOLOGY. 30 (24): 24LT01- - 2019-06-14 30(24), DOI: 10.1088/1361-6528/ab0bc1

Authors: Maeso, David; Pakdel, Sahar; Santos, Hernan; Agrait, Nicolas; Palacios, Juan Jose; Prada, Elsa; Rubio-Bollinger, Gabino

Affiliations

IMDEA Nanociencia, E-28049 Madrid, Spain - Author
Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, E-28049 Madrid, Spain - Author
Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain - Author
Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain - Author
Univ Tehran, Univ Coll Engn, Sch Elect & Comp Engn, Tehran 14395515, Iran - Author
Univ Texas Austin, Dept Phys, Austin, TX 78712 USA - Author
See more

Abstract

Few-layer GaSe is one of the latest additions to the family of two-dimensional semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile strain of up to 5%. The strain profile modifies the local optoelectronic properties of the alternating compressive and tensile regions, which translates into a remarkable shift of the optical absorption band-edge of up to 1.2 eV between crests and valleys. Our experimental observations are supported by theoretical results from density functional theory calculations performed for monolayers and multilayers ( up to seven layers) under tensile and compressive strain. This large band gap tunability can be explained through a combined analysis of the elastic response of Ga atoms to strain and the symmetry of the wave functions.

Keywords

Band gap modulationBandgapEnergyGallium selenide (gase)GapInseMonolayerNanosheetsOptical absorptionOxidationStrain engineeringTunabilityTwo-dimensional materialsVersatile

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal NANOTECHNOLOGY due to its progression and the good impact it has achieved in recent years, according to the agency Scopus (SJR), it has become a reference in its field. In the year of publication of the work, 2019, it was in position , thus managing to position itself as a Q1 (Primer Cuartil), in the category Electrical and Electronic Engineering.

From a relative perspective, and based on the normalized impact indicator calculated from the Field Citation Ratio (FCR) of the Dimensions source, it yields a value of: 5.97, which indicates that, compared to works in the same discipline and in the same year of publication, it ranks as a work cited above average. (source consulted: Dimensions Aug 2025)

Specifically, and according to different indexing agencies, this work has accumulated citations as of 2025-08-02, the following number of citations:

  • WoS: 22
  • Scopus: 20
  • Europe PMC: 1
  • Google Scholar: 25

Impact and social visibility

From the perspective of influence or social adoption, and based on metrics associated with mentions and interactions provided by agencies specializing in calculating the so-called "Alternative or Social Metrics," we can highlight as of 2025-08-02:

  • The use, from an academic perspective evidenced by the Altmetric agency indicator referring to aggregations made by the personal bibliographic manager Mendeley, gives us a total of: 29.
  • The use of this contribution in bookmarks, code forks, additions to favorite lists for recurrent reading, as well as general views, indicates that someone is using the publication as a basis for their current work. This may be a notable indicator of future more formal and academic citations. This claim is supported by the result of the "Capture" indicator, which yields a total of: 29 (PlumX).

With a more dissemination-oriented intent and targeting more general audiences, we can observe other more global scores such as:

  • The Total Score from Altmetric: 0.25.
  • The number of mentions on the social network X (formerly Twitter): 1 (Altmetric).

It is essential to present evidence supporting full alignment with institutional principles and guidelines on Open Science and the Conservation and Dissemination of Intellectual Heritage. A clear example of this is:

  • The work has been submitted to a journal whose editorial policy allows open Open Access publication.
  • Assignment of a Handle/URN as an identifier within the deposit in the Institutional Repository: https://repositorio.uam.es/handle/10486/690155

Leadership analysis of institutional authors

This work has been carried out with international collaboration, specifically with researchers from: Iran; United States of America.

There is a significant leadership presence as some of the institution’s authors appear as the first or last signer, detailed as follows: First Author (Maeso Yela, David) and Last Author (RUBIO BOLLINGER, GABINO).

the author responsible for correspondence tasks has been RUBIO BOLLINGER, GABINO.