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The authors from Moldova State University, Institute of Applied Physics appreciate the financial support from the Institutional Project ANCD 20.80009.5007.03. This work was also supported by the Spanish Ministry of Science and Innovation (MCIN) and the Agencia Estatal de Investigacion (AEI) 10.13039/501100011033 and by the European Union NextGenerationEU/PRTR grants ASSESS (TED2021-129666B-C21), the CELL2WIN (PID2019-104372RB-C32), the MaterOne (PID 2020-116719RB-C42), and the ALPHOMENA (PID2021-123190OB-I00). The authors from IREC belong to the MNT-Solar Consolidated Research Group of the "Generalitat de Catalunya" (ref. 2021 SGR 01286) and are grateful for the support from European Regional Development Funds (ERDF, FEDER Programa Competitivitat de Catalunya 2007-2013). V. R. acknowledges the support from the predoctoral program AGAUR-FI ajuts (2023 FI-1 00436), Joan Oro of the Secretariat of Universities and Research of the Department of Research and Universities of the Generalitat of Catalonia and the European Social Plus Fund. M. G. acknowledges the financial support from the Spanish Ministry of Science, Innovation and Universities within the Juan de la Cierva fellowship (IJC2018-038199-I).

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Raman scattering and spectroscopic ellipsometry studies of Sb2S3 and Sb2Se3 bulk polycrystals

Publicado en:PHYSICAL CHEMISTRY CHEMICAL PHYSICS. 25 (45): 31188-31193 - 2023-10-31 25(45), DOI: 10.1039/d3cp04490d

Autores: Hajdeu-Chicarosh, E.; Rotaru, V.; Levcenko, S.; Serna, R.; Victorov, I.A.; Guc, M.; Caballero, R.; Merino, J.M.; Arushanov, E.; León, M.

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Antimony sulfide (Sb2S3) and antimony selenide (Sb2Se3) compounds have attracted considerable attention for applications in different optoelectronic devices due to their notable optical and electrical properties, and due to the strong anisotropy of these properties along different crystallographic directions. However, the efficient use of these promising compounds still requires significant efforts in characterization of their fundamental properties. In the present study, Raman scattering and spectroscopic ellipsometry were used to investigate the vibrational and optical properties of Sb2Se3 and Sb2S3 bulk polycrystals grown by the modified Bridgman method. The first technique proved the presence of the desired Sb2S3 and Sb2Se3 phases in the analyzed ingots and confirmed the absence of any preferential crystallographic orientation at the measured surface of the samples. Spectroscopic ellipsometry was performed using a multi-oscillator Tauc-Lorentz dispersion model, and yielded a complex dielectric function of chalcogenides over the range 1.0-4.6 eV with a three phase model (ambient, surface and bulk materials). Finally, spectral data on the refractive index, the extinction coefficient, the absorption coefficient and the reflectivity at normal incidence, R, were obtained, which serve as a reference for the optical modeling of optoelectronic devices based on polycrystalline Sb2S3 and Sb2Se3 compounds.

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