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Fernandez-Garrido, SAuthor

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January 3, 2022
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Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

Publicated to: Nanoscale Advances. 4 (2): 562-572 - 2022-01-21 4(2), DOI: 10.1039/d1na00773d

Authors:

Volkov, Roman; Borgardt, Nikolai, I; Konovalov, Oleg, V; Fernandez-Garrido, Sergio; Brandt, Oliver; Kaganer, Vladimir M.;
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Affiliations

ESRF European Synchrotron, 71 Ave Martyrs, F-38043 Grenoble, France - Author
Leibniz Inst Forschungsverbund Berlin eV, Paul Drude Inst Festkorperelekt, Hausvogteipl 57, D-10117 Berlin, Germany - Author
Natl Res Univ Elect Technol MIET, Bld 1,Shokin Sq, Moscow 124498, Russia - Author
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Abstract

We study the cross-sectional shape of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height for NWs of different lengths. Two distinct trends in the evolution of the cross-sectional shape along the NW length are observed. At the top, merging NWs develop common {1100} side facets. At the bottom, the NWs acquire roundish shapes. This observation is explained by the entirely different NW environments at the top and the bottom of the NWs. At the top, NWs are exposed to the Ga and N atomic fluxes giving rise to axial growth, resulting in the equilibrium growth shape with zero growth rate at the {1100} facets. At the bottom, NWs are shadowed from the impinging fluxes and are only annealed, allowing them to eventually approach the equilibrium crystal shape. The study of identical samples by grazing incidence small-angle X-ray scattering independently confirms these trends in the shape evolution of the sidewall facets.
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Keywords

Electron-diffraction analysisNucleationPolarReduction

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal Nanoscale Advances due to its progression and the good impact it has achieved in recent years, according to the agency Scopus (SJR), it has become a reference in its field. In the year of publication of the work, 2022, it was in position , thus managing to position itself as a Q1 (Primer Cuartil), in the category Engineering (Miscellaneous). Notably, the journal is positioned above the 90th percentile.

Independientemente del impacto esperado determinado por el canal de difusión, es importante destacar el impacto real observado de la propia aportación.

Según las diferentes agencias de indexación, el número de citas acumuladas por esta publicación hasta la fecha 2026-04-04:

  • Google Scholar: 2
  • WoS: 2
  • Scopus: 2
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Impact and social visibility

From the perspective of influence or social adoption, and based on metrics associated with mentions and interactions provided by agencies specializing in calculating the so-called "Alternative or Social Metrics," we can highlight as of 2026-04-04:

  • The use of this contribution in bookmarks, code forks, additions to favorite lists for recurrent reading, as well as general views, indicates that someone is using the publication as a basis for their current work. This may be a notable indicator of future more formal and academic citations. This claim is supported by the result of the "Capture" indicator, which yields a total of: 2 (PlumX).
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Leadership analysis of institutional authors

This work has been carried out with international collaboration, specifically with researchers from: France; Germany; Russia.

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Awards linked to the item

We thank Carsten Stemmler (Paul-Drude-Institut, Berlin) for his help with the preparation of the samples and Lutz Geelhaar (Paul-Drude-Institut, Berlin) for a critical reading of the manuscript. We acknowledge the ESRF for providing the beamtime. RV and NIB acknowledge the partial.nancial support of the Ministry of Science and Higher Education of the Russian Federation (State assignment No. FSMR-2020-0018). SFG acknowledges the partial.nancial support received through the Spanish program Ram ' on y Cajal (co-.nanced by the European Social Fund) under grant RYC-2016-19509 from the former Ministerio de Ciencia, Innovaci ' on y Universidades.
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