Timeline
octubre de 1989
Doctorado: Doctor/a
Universidad Autónoma de Madrid
enero de 1989
Doctorado: Difusión asistida por láser en arseniuro de galio
Universidad Autónoma de Madrid (1989).
junio de 1982
Titulado superior / Grado: Licenciado en Ciencias Físicas
Universidad Autónoma de Madrid
Timeline
agosto de 2019
Catedrático de Universidad
Universidad Autónoma de Madrid. Física Aplicada
2019 -
diciembre de 2018
Coordinador/a
Universidad Autónoma de Madrid. Electrónica Y Semiconductores
2018 -
junio de 2002
COORDINADOR/A LABORATORIOS DOCENCIA
Universidad Autónoma de Madrid
2002 - 2013
enero de 2001
DELEGADO/A RECTOR PRÁCTICAS DOCENTES
Universidad Autónoma de Madrid
2001 - 2002
julio de 1996
Profesor Titular Universidad. Física Aplicada
Universidad Autónoma de Madrid
1996 - 2019
enero de 1993
Profesor Interino Titular Universidad. Física Aplicada
Universidad Autónoma de Madrid
1993 - 1996
octubre de 1992
Profesor Asociado LRU. Física Aplicada
Universidad Autónoma de Madrid
1992 - 1992
octubre de 1989
Ayudante Universidad LRU. -
Universidad Autónoma de Madrid
1989 - 1992
octubre de 1987
Ayudante Universidad LRU. Física Aplicada
Universidad Autónoma de Madrid
1987 - 1992
enero de 1983
Ayudante anterior a LRU. -
Universidad Autónoma de Madrid
1983 - 1987
Doctorado
Universidad Autónoma de Madrid
- 1989
Tramos de Investigación
Sexenios
5
Año último Sexenio: 2015
Tramos de Transferencia
Tramos de Docencia
Quinquenios
6
Año último Quinquenio: 2018
Temáticas más frecuentes
Temáticas
Proyectos participados
Dirección y participación en proyectos
IP
NO IP
Grupos, Redes
Electrónica Y Semiconductores
Actividad docente
Tesis Dirigidas
5
Centros
Universidad Autónoma de Madrid
Asignatura / Curso
Publicaciones en Altmetrics
| 2021 | Automated system for surface photovoltage spectroscopy | |
| 2020 | Single GaAs nanowire based photodetector fabricated by dielectrophoresis | |
| 2019 | Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy | |
| 2018 | WTe2Synthesis by Tellurization of W Precursors Using Isothermal Close Space Vapo... | |
| 2018 | A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assis... | |
| 2017 | Photodetector fabrication by dielectrophoretic assembly of GaAs nanowires grown ... | |
| 2017 | Structural, electric modulus and complex impedance analysis of ZnO/TiO2 composit... | |
| 2015 | GaAs nanowires grown by Ga-assisted chemical beam epitaxy: Substrate preparation... | |
| 2015 | High Efficiency Si Solar Cells Characterization Using Impedance Spectroscopy Ana... | |
| 2015 | Fabrication and characterization of multiband solar cells based on highly mismat... | |
| 2015 | On the growth mechanisms of GaAs nanowires by Ga-assisted chemical beam epitaxy | |
| 2014 | Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epi... | |
| 2014 | Enhanced fabrication process of zinc oxide nanowires for optoelectronics | |
| 2013 | Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy | |
| 2011 | Sn doped GaAs by CBE using tetramethyltin | |
| 2011 | Ga and In incorporation rates in Ga1-xInxAs growth by chemical beam epitaxy | |
| 2010 | Isothermal close space sublimation of CdTe/ZnTe heterostructures in vacuum condi... | |
| 2010 | Directional dependence of the second harmonic response in two-dimensional nonlin... | |
| 2008 | Optical-field profiles in InxGa1-xN-MQW laser structures | |
| 2008 | The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs(1-x)N(x)thin films | |
| 2008 | Selective rearrangement of Nd(3+) centers in LiNbO(3) under ferroelectric domain... | |
| 2007 | Nd3+ ion shift under domain inversion by electron beam writing in LiNbO3 | |
| 2007 | Photoluminescence-free photoreflectance spectra using dual frequency modulation | |
| 2006 | Fabrication of domain inverted structures by direct electron bombardment in LiNb... | |
| 2005 | Temperature dependence of photoluminescence and photoreflectance spectra of dilu... | |
| 2002 | Preparation and passivation of GaAs(001) surfaces for growing organic molecules | |
| 2001 | Channel waveguides grown by selective area chemical beam epitaxy | |
| 2000 | Low temperature electron cyclotron resonance plasma technique for low loss integ... | |
| 2000 | Role of stress and percolation effects on the anodic silicon oxides growth mecha... | |
| 1999 | Phosphorus and arsenic incorporation during chemical beam epitaxial growth of st... | |
| 1998 | Chemical beam epitaxial growth of GaAs1-xPx on GaAs (100) substrates | |
| 1995 | Frequency analysis of reflection high-energy electron diffraction intensity osci... | |
| 1995 | Growth optimization and optical properties of GaAs-(Ga,Al)As quantum well struct... | |
| 1995 | GaAs growth on (111)B substrates by molecular-beam epitaxy: a study of the first... | |
| 1995 | Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium | |
| 1993 | Raman characterization of GaAs doped with Sn by laser assisted diffusion | |
| 1993 | Molecular beam epitaxial growth and optical characterization of GaAs/AlGaAs quan... | |
| 1992 | RAMAN AND POINT CONTACT CURRENT VOLTAGE CHARACTERIZATION OF LASER-INDUCED DIFFUS... | |
| 1992 | GaAs doping by rapid thermal diffusion of a laser deposited elemental Zn source ... | |
| 1990 | LASER MELTING OF GAAS COVERED WITH THIN METAL LAYERS | |
| 1990 | Tin diffusion and segregation in GaAs processed with a pulsed ruby laser | |
| 1989 | Laser assisted diffusion in GaAs from thin evaporated layers | |
| 1988 | Electronic defect levels in continuous wave laser annealed silicon metal oxide s... | |
| 1988 | GE DIFFUSION INTO GAAS BY PULSED LASER IRRADIATION | |
| 1985 | Defect levels in monocrystalline and polycrystalline silicon MOS devices: A comp... |
Colaboración institucional últimos 5 años
